IXKC13N80C - IXYS Corporation

IXKC13N80C CoolMOS Power MOSFET

Advanced Technical Information IXKC 13N80C CoolMOS™ 1) Power MOSFET ISOPLUS™ Package N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D G S ID25 = 13 A VDSS = 800 V RDS(on) max = 290 mΩ ISOPLUS220™ G D S E72873 • isolated back surface MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Symbol RDSon VGS(th) I.

Features

Conditions TVJ = 25°C Maximum Ratings 800 V
• Silicon chip on Direct-Copper-Bond substrate - high power dissipation ± 20 V - isolated mounting surface TC = 25°C TC = 90°C - 2500 V electrical isolation 13 A
• 3rd generation CoolMOS™ 1) power 9 A MOSFET TJ start = 25°C; single pulse; ID = 3.4 A 670 mJ - high blocking capability TJ start = 25°C; repetitive; ID = 17 A 0.5 mJ - lowest resistance VDS < VDSS; IF = 17 A; TVJ = 150°C dIR /dt = 100 A/µs 6 V/ns t Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = ID90 u VDS = V.