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IXKH 30N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D ID25 = 30 A VDSS = 600 V RDS(on) max = 0.125 Ω TO-247 AD G G D S S q D(TAB) MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Symbol TC = 25°C TC = 90°C single pulse repetitive ID = 11 A; TC = 25°C Conditions TVJ = 25°C Maximum Ratings 600.
• fast CoolMOS™ 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness
• Enhanced total power density Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
MOSFET dV/dt ruggedness VDS = 0...480 V Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. 110 2.5 TVJ = 25°C TVJ = 125°C 3 20 100 2500 120 53 12 18 15 5 .
IXKH30N60C5 - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 125mΩ@VGS=10V ·Fully characteri.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXKH35N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IXKH35N60C5 |
IXYS |
Power MOSFET |
|
| 3 | IXKH20N60C5 |
IXYS |
Power MOSFET |
|
| 4 | IXKH20N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXKH24N60C5 |
IXYS |
CoolMOS Power MOSFET |
|
| 6 | IXKH24N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IXKH47N60C |
IXYS |
Power MOSFET |
|
| 8 | IXKH47N60C |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IXKH70N60C5 |
IXYS |
Power MOSFET |
|
| 10 | IXKH70N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IXKC13N80C |
IXYS Corporation |
CoolMOS Power MOSFET |
|
| 12 | IXKC13N80C |
INCHANGE |
N-Channel MOSFET |
|