IXKH47N60C - IXYS

IXKH47N60C Power MOSFET

IXKH 47N60C CoolMOS™ 1) Power MOSFET Low RDSon, high VDSS Superjunction MOSFET D VDSS = 600 V ID25 = 47 A RDS(on) max = 70 mΩ TO-247 G G D S S q tab E72873 MOSFET Symbol VDSS VGS ID25 ID100 EAS EAR dV/dt Symbol TC = 25°C TC = 100°C single pulse ID = 10 A; TC = 25°C repetitive ID = 20 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0...480 V Conditions Con.

Features

• 3rd generation Superjunction power MOSFET - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating 1) Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. 60 2 TVJ = 25°C TVJ = 150°C max. 70 4 25 250 ±100 tbd tbd 255 30 110 20 27 111 10 0.3 650 mΩ V µA µA nA pF pF nC nC nC ns ns ns ns K/W RDSon VGS(th) IDSS IGSS Ciss Cos.