IXGN50N60B - IXYS Corporation

IXGN50N60B HiPerFASTTM IGBT

HiPerFASTTM IGBT IXGN 50N60B VCES = 600 V IC25 = 75 A VCE(sat) = 2.5 V Preliminary data sheet E www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W C.

Features

• International standard package SOT-227B
• Aluminium nitride isolation - high power dissipation
• Isolation voltage 3000 V~
• Very high current, fast switching IGBT
• Low VCE(sat) for minimum on-state conduction losses
• MOS Gate turn-on drive simplicity
• Low collector-to-case capacitance (< 50 pF)
• Low package inductance (< 5 nH) - easy to drive and to protect Applications Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Value.