IXGN120N60A3 - IXYS

IXGN120N60A3 IGBT

GenX3TM 600V IGBT IXGN120N60A3 IXGN120N60A3D1 Ultra-low Vsat PT IGBTs for up to 5kHz switching Symbol VCES VCGR VGES VGEM IC25 IC110 I F110 I CM SSOA (RBSOA) PC TJ T JM T stg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms IXGN120N60A3D1 VGE= 15V, TV.

Features

Optimized for Low Conduction Losses Square RBSOA Anti-Parallel Ultra Fast Diode International Standard Package miniBLOC UL Recognized Aluminium Nitride Isolation Isolation Voltage 3000 V~ Low VCE(sat) for Minimum On-State Advantages High Power Density Low Gate Drive Requirement Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits High Power Density © 2009 IXYS CORPORATION, All Rights Reserved DS99927B(02/09) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) g fs IC = 60A, VCE = 10V.