IXGN200N60A2 - IXYS

IXGN200N60A2 IGBT

IGBT Optimized for Switching up to 5 kHz IXGN 200N60A2 VCES IC25 VCE(sat) = 600 V = 200 A = 1.35 V Preliminary Data Sheet Symbol Test Conditions VCES VCGR TJ TJ VGES VGEM IC25 IC110 ICM SSOA (RBSOA) = 25°C to 150°C = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 2.0 Ω Clamped ind.

Features

z International standard package miniBLOC z Aluminium nitride isolation - high power dissipation z Isolation voltage 3000 V~ z Very high current IGBT z Low VCE(sat) for minimum on-state conduction losses z MOS Gate turn-on - drive simplicity z Low collector-to-case capacitance (< 50 pF) z Low package inductance (< 5 nH) - easy to drive and to protect Symbol VGE(th) ICES IGES VCE(sat) Test Conditions IC = 1 mA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC110, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C 2.5 5..