IXGN400N30A3 - IXYS

IXGN400N30A3 300V IGBT

GenX3TM 300V IGBT IXGN400N30A3 Ultra-Low-Vsat PT IGBT for up to 10kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C Terminal Current Limit TC = 25°C, 1ms VGE= 15V, TVJ = 125°C.

Features

z Optimized for Low Conduction Losses z High Current Capability z International Standard Package z miniBLOC, with Aluminium Nitride Isolation Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts z Inrush Current Protection Circuits © 2009 IXYS CORPORATION, All Rights Reserved DS99592B(7/09) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 10.