IXGN50N120C3H1 - IXYS

IXGN50N120C3H1 High-Speed PT IGBT

Advance Technical Information GenX3TM 1200V IGBT w/ Diode High-Speed PT IGBT for 20-50 kHz Switching IXGN50N120C3H1 VCES IC110 VCE(sat) = 1200V = 50A ≤£ 4.2V SOT-227B, miniBLOC E153432 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Test Conditions TJ = 25°C to 150°C TJ = 25.

Features

z z z z z z V V V V A A A A A Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C Mounting Torque Terminal Connection Torque Optimized for Low Switching Losses Square RBSOA High Current Capability Isolation Voltage 2500V~ Anti-Parallel Ultra Fast Diode International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = V.