IXGN50N60B |
Part Number | IXGN50N60B |
Manufacturer | IXYS Corporation |
Description | HiPerFASTTM IGBT IXGN 50N60B VCES = 600 V IC25 = 75 A VCE(sat) = 2.5 V Preliminary data sheet E www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight ... |
Features |
• International standard package SOT-227B • Aluminium nitride isolation - high power dissipation • Isolation voltage 3000 V~ • Very high current, fast switching IGBT • Low VCE(sat) for minimum on-state conduction losses • MOS Gate turn-on drive simplicity • Low collector-to-case capacitance (< 50 pF) • Low package inductance (< 5 nH) - easy to drive and to protect Applications Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Value... |
Document |
IXGN50N60B Data Sheet
PDF 125.74KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGN50N60BD2 |
IXYS Corporation |
(IXGN50N60BD2 / IXGN50N60BD3) HiPerFAST IGBT | |
2 | IXGN50N60BD3 |
IXYS Corporation |
(IXGN50N60BD2 / IXGN50N60BD3) HiPerFAST IGBT | |
3 | IXGN50N120C3H1 |
IXYS |
High-Speed PT IGBT | |
4 | IXGN100N170 |
IXYS |
High Voltage IGBT | |
5 | IXGN120N60A3 |
IXYS |
IGBT |