IXGN100N170 - IXYS

IXGN100N170 High Voltage IGBT

High Voltage IGBT IXGN100N170 VCES = IC90 = V ≤CE(sat) 1700V 95A 3.0V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load VGE = 15V, V.

Features

z Optimized for Low Conduction and Switching Losses z Isolation Voltage 2500V~ z Short Circuit Capability z International Standard Package z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Welding Machines © 2012 IXYS CORPORATION, All Rights Reserved DS100091A(01/12) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge IC = 100A, VGE = 15V, VCE = 0.5
• VCES Qgc td(on) tr td.