IXFC80N10 - IXYS Corporation

IXFC80N10 HiPerFETTM MOSFET ISOPLUS220

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFC 80N10 VDSS ID25 RDS(on) trr = 100 V = 80 A = 12.5 mΩ ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight Test Conditi.

Features

l l l l l 1.6 mm (0.062 in.) from case for 10 s Mounting force 50/60 Hz, RMS, leads-to-tab 300 11..65/2.4..11 Nm/lb 2500 2 V~ g l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsicRectifier Applications l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 4.0 ± 100 TJ = 25°C TJ = 125°C V V l l l VDSS VGS(th) .