IXFC15N80Q - IXYS Corporation

IXFC15N80Q HiPerFET ISOPLUS 220 MOSFET Q-Class Electrically Isolated Back Surface

www.DataSheet4U.com IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET Q-Class Electrically Isolated Back Surface N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 RDS(on) = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns ISOPLUS220TM Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case f.

Features

Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<35pF) z Low RDS (on) z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier z G D S Isolated back surface
* D = Drain Applications DC-DC converters Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, I.