IXFC24N50 - IXYS Corporation

IXFC24N50 (IXFC24N50 / IXFC26N50) HiPerFET MOSFETs ISOPLUS220

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) 0.20 Ω 0.23 Ω IXFC 26N50 IXFC 24N50 500 V 23 A 500 V 21 A trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Weight Te.

Features

l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Fast intrinsic Rectifier Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control Advantages l Easy assembly: no screws, or isolation foils required l Space savings l High power density l Low collector capacitance to ground (low EMI) Symb.