IXFC14N60P - IXYS Corporation

IXFC14N60P PolarHV HiPerFET Power MOSFET

PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFC14N60P VDSS ID25 RDS(on) trr = = ≤ ≤ 600V 8A 630mΩ 200ns ISOPLUS 220TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s.

Features

UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Avanlache rated Fast intrinsic diode Advantages Easy to mount Space savings High power density Applications: Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 2.5mA VGS = ±30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 7A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.5 V V Switched-mode and resonant-mode power supplies DC-DC Converters Laser Dr.