ADVANCED TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFC13N50 VDSS ID25 RDS(on) trr = 500 = 12 = 0.4 ≤ 250 V A Ω ns ISOPLUS 220TM Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight 1.6 mm (0.062 in.) from case for 10 s Test.
z D = Drain z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated FastintrinsicRectifier Applications z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ± 100 TJ = 25°C TJ = 125°C 200 1 0.4 V V nA µA mA Ω z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC mo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFC110N10P |
IXYS |
PolarHT HiPerFET Power MOSFET | |
2 | IXFC12N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET ISOPLUS220 | |
3 | IXFC14N60P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET | |
4 | IXFC14N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET ISOPLUS 220 | |
5 | IXFC15N80Q |
IXYS Corporation |
HiPerFET ISOPLUS 220 MOSFET Q-Class Electrically Isolated Back Surface | |
6 | IXFC16N50P |
IXYS |
PolarHV HiPerFET Power MOSFET | |
7 | IXFC16N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET ISOPLUS220 | |
8 | IXFC20N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET | |
9 | IXFC24N50 |
IXYS Corporation |
(IXFC24N50 / IXFC26N50) HiPerFET MOSFETs ISOPLUS220 | |
10 | IXFC26N50 |
IXYS Corporation |
(IXFC24N50 / IXFC26N50) HiPerFET MOSFETs ISOPLUS220 | |
11 | IXFC26N50P |
IXYS |
PolarHV HiPerFET Power MOSFET | |
12 | IXFC30N60P |
IXYS Corporation |
Polar MOSFETs |