IXFC20N80P - IXYS Corporation

IXFC20N80P PolarHV HiPerFET Power MOSFET

PolarHVTM HiPerFET Power MOSFET IXFC 20N80P IXFR 20N80P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL www.DataSheet4U.net VDSS = 800 V ID25 = 10 A RDS(on) ≤ 500 mΩ ≤ 250 ns trr Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; .

Features

z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) Applications z DC-DC converters z z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ±100 25 1 500 V V nA μA mA mΩ Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages z Easy assem.