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IXFC80N10 |
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| Part Number | IXFC80N10 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFC 80N10 VDSS I... |
| Features |
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1.6 mm (0.062 in.) from case for 10 s Mounting force 50/60 Hz, RMS, leads-to-tab
300
11..65/2.4..11 Nm/lb 2500 2 V~ g
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Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsicRectifier
Applications
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Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 4.0 ± 100 TJ = 25°C TJ = 125°C V V
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VDSS VGS(th) ... |
| Document |
 IXFC80N10 Data Sheet
PDF 98.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXFC80N08 |
IXYS Corporation |
(IXFC80N08 / IXFC80N085) HIPERFET-TM MOSFET ISOPLUS220-TM |
|
| 2 | IXFC80N085 |
IXYS Corporation |
(IXFC80N08 / IXFC80N085) HIPERFET-TM MOSFET ISOPLUS220-TM |
|
| 3 | IXFC110N10P |
IXYS |
PolarHT HiPerFET Power MOSFET |
|
| 4 | IXFC12N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET ISOPLUS220 |
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| 5 | IXFC13N50 |
IXYS Corporation |
HiPerFET MOSFET ISOPLUS220 |
|