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IXFC13N50 |
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| Part Number | IXFC13N50 |
| Manufacturer | IXYS Corporation |
| Description | ADVANCED TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFC13N50 VDSS ID25 RDS(on) trr = 50... |
| Features |
z
D = Drain
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Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated FastintrinsicRectifier
Applications
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Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ± 100 TJ = 25°C TJ = 125°C 200 1 0.4 V V nA µA mA Ω
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DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC mo... |
| Document |
 IXFC13N50 Data Sheet
PDF 523.23KB |
| Distributor | Stock | Price | Buy |
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| 2 | IXFC12N80P |
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| 4 | IXFC14N80P |
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