IXFC26N50P - IXYS

IXFC26N50P PolarHV HiPerFET Power MOSFET

Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrinsic Diode Avalanche Rated IXFC 26N50P VDSS = 500 V = 15 A ID25 RDS(on) = 260 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = .

Features

z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) Applications z DC-DC converters z z z z ISOPLUS220TM (IXFC) E153432 G D S Isolated Tab G = Gate S = Source D = Drain 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1, leads-to-tab Mounting Force 300 2500 11..65/2.5..15 2 Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0.