www.DataSheet4U.com High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 10N170 IXBT 10N170 VCES = 1700 V IC25 = 20 A VCE(sat) = 3.8 V Preliminary Data Sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°.
z z Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 AD TO-268 1.13/10Nm/lb.in. 6 4 g g z z z High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Low conduction losses High current handling capability MOS Gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 0.10 3.0 - 0.24 TJ = 25°C TJ = 125°C V %/K 5.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXBT12N300 |
IXYS |
Bipolar MOS Transistor | |
2 | IXBT16N170 |
IXYS |
BIMOSFET Monolithic Bipolar MOS Transistor | |
3 | IXBT16N170A |
IXYS Corporation |
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor | |
4 | IXBT20N360HV |
IXYS |
Monolithic Bipolar MOS Transistor | |
5 | IXBT42N170 |
IXYS Corporation |
Monolithic Bipolar MOS Transistor | |
6 | IXBT42N170A |
IXYS Corporation |
Monolithic Bipolar MOS Transistor | |
7 | IXBT6N170 |
IXYS |
BIMOSFET Monolithic Bipolar MOS Transistor | |
8 | IXBD4410 |
IXYS Corporation |
(IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset | |
9 | IXBD4411 |
IXYS Corporation |
(IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset | |
10 | IXBF12N300 |
IXYS |
Monolithic Bipolar MOS Transistor | |
11 | IXBF40N160 |
IXYS |
High Voltage BIMOSFET | |
12 | IXBF55N300 |
IXYS |
Monolithic Bipolar MOS Transistor |