Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat) ≤ 3000V 12A 3.2V Symbol VCES VCGR VGES VGEM IC25 IICCM110 SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TTCC = 110°C = 25°C, 1ms VGE = 15V,.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXBT10N170 |
IXYS Corporation |
High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor |
|
| 2 | IXBT16N170 |
IXYS |
BIMOSFET Monolithic Bipolar MOS Transistor |
|
| 3 | IXBT16N170A |
IXYS Corporation |
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor |
|
| 4 | IXBT20N360HV |
IXYS |
Monolithic Bipolar MOS Transistor |
|
| 5 | IXBT42N170 |
IXYS Corporation |
Monolithic Bipolar MOS Transistor |
|
| 6 | IXBT42N170A |
IXYS Corporation |
Monolithic Bipolar MOS Transistor |
|
| 7 | IXBT6N170 |
IXYS |
BIMOSFET Monolithic Bipolar MOS Transistor |
|
| 8 | IXBD4410 |
IXYS Corporation |
(IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset |
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| 9 | IXBD4411 |
IXYS Corporation |
(IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset |
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| 10 | IXBF12N300 |
IXYS |
Monolithic Bipolar MOS Transistor |
|
| 11 | IXBF40N160 |
IXYS |
High Voltage BIMOSFET |
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| 12 | IXBF55N300 |
IXYS |
Monolithic Bipolar MOS Transistor |
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