IXBF55N300 - IXYS

IXBF55N300 Monolithic Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = IC110 = VCE(sat)  3000V 34A 3.2V (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 25 V ± 35 V IC25 TC = 25°C 86 A IC110 TC =.

Features

 Silicon Chip on Direct-Copper Bond (DCB) Substrate
 Isolated Mounting Surface
 4000V~ Electrical Isolation
 High Blocking Voltage
 High Peak Current Capability
 Low Saturation Voltage Advantages
 Low Gate Drive Requirement
 High Power Density Applications
 Switch-Mode and Resonant-Mode Power Supplies
 Uninterruptible Power Supplies (UPS)
 Laser Generators
 Capacitor Discharge Circuits
 AC Switches © 2021 Littelfuse, Inc. DS100205C(7/21) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. g I = 55A, V = 10V, Note 1 32 50 S .