IXBF40N160 - IXYS

IXBF40N160 High Voltage BIMOSFET

High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 40N160 IC25 = 28 A VCES = 1600 V VCE(sat) = 6.2 V tf = 40 ns 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol V CE(sat) VGE(th) ICES IGES td(on) t r td(off) tf C ies QGon VF RthJC Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 15/0 V; RG = 22 .

Features

• High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability
• ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline Applications
• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators 0648 IXYS reserves the right to change limits, test cond.