IXBT20N360HV - IXYS

IXBT20N360HV Monolithic Bipolar MOS Transistor

Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT20N360HV IXBH20N360HV VCES = IC110 = VCE(sat)  3600V 20A 3.4V Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Cont.

Features

 High Voltage Packages
 High Blocking Voltage
 High Peak Current Capability
 Low Saturation Voltage Advantages
 Low Gate Drive Requirement
 High Power Density Applications
 Switch-Mode and Resonant-Mode Power Supplies
 Uninterruptible Power Supplies (UPS)
 Laser Generators
 Capacitor Discharge Circuits
 AC Switches © 2014 IXYS CORPORATION, All Rights Reserved DS100643(12/14) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 20A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 20A, VGE = 15V, VCE = 1000V td(on) tri In.