Package Temperature Range IXBD4410PI IXBD4411PI IXBD4410SI IXBD4411SI Full-Feature Low-Side Driver 16-Pin P-DIP Full-Feature High-Side Driver 16-Pin P-DIP Full-Feature Low-Side Driver 16-Pin SO Full-Feature High-Side Driver 16-Pin SO -40 to +85°C -40 to +85°C -40 to +85°C -40 to +85°C The IXBD4410/IXBD4411 ISOSMART chipset is designed to control the gate.
z z z z z z z z z z z z z z 1200 V or greater low-to-high side isolation. Drives Power Systems Operating on up to 575 V AC mains dv/dt immunity of greater than ±50V/ns Proprietary low-to-high side level translation and communication On-chip negative gate-drive supply to ensure Power MOSFET or IGBT turn-off and to prevent gate noise interference 5 V logic compatible HCMOS inputs with hysteresis Available in either the 16-Pin DIP or the 16-Pin wide-body, small-outline plastic package 20 ns switching time with 1000 pF load; 100 ns switching time with 10,000 pF load 100 ns propagation delay ti.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXBD4410 |
IXYS Corporation |
(IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset | |
2 | IXBF12N300 |
IXYS |
Monolithic Bipolar MOS Transistor | |
3 | IXBF40N160 |
IXYS |
High Voltage BIMOSFET | |
4 | IXBF55N300 |
IXYS |
Monolithic Bipolar MOS Transistor | |
5 | IXBF9N140 |
IXYS Corporation |
High Voltage BIMOSFET | |
6 | IXBF9N140 |
IXYS Corporation |
Power MOSFET | |
7 | IXBF9N160 |
IXYS Corporation |
High Voltage BIMOSFET | |
8 | IXBF9N160 |
IXYS Corporation |
Power MOSFET | |
9 | IXBF9N160G |
IXYS |
High Voltage BIMOSFET | |
10 | IXBH10N170 |
IXYS Corporation |
High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor | |
11 | IXBH12N300 |
IXYS |
Bipolar MOS Transistor | |
12 | IXBH15N140 |
IXYS Corporation |
(IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |