PD - 97355B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery .
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• Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package
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IRGS4062DPbF IRGSL4062DPbF
VCES = 600V IC = 24A, TC = 100°C
G E
tSC ≥ 5µs, TJ(max) = 175°C
n-channel
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VCE(on) typ. = 1.65V
C
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to Low VCE (ON) and .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRGS4064DPBF |
International Rectifier |
Power MOSFET | |
2 | IRGS4065PBF |
International Rectifier |
IGBT | |
3 | IRGS4045DPBF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
4 | IRGS4055PBF |
International Rectifier |
PDP Trench IGBT | |
5 | IRGS4056DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRGS4086PbF |
International Rectifier |
PDP Trench IGBT | |
7 | IRGS4607DPBF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
8 | IRGS4610DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | IRGS4615DPBF |
International Rectifier |
Power MOSFET | |
10 | IRGS4620DPBF |
International Rectifier |
Power MOSFET | |
11 | IRGS4620DPbF |
Infineon |
IGBT | |
12 | IRGS4630DPBF |
International Rectifier |
Insulated Gate Bipolar Transistor |