IRGS4045DPBF - International Rectifier

IRGS4045DPBF Insulated Gate Bipolar Transistor

IRGS4045DPbF VCES = 600V IC  6.0A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC tsc > 5µs, Tjmax = 175°C VCE(on) typ.  1.7V G E n-channel E D2-PakG IRGS4045DPbF Applications  Appliance Motor Drive  Inverters  SMPS G Gate C Colletor E Emitter Fe a ture s Low VCE(ON) and switching losses  Benefits High eff.

Features

ape and Reel Right Quantity 50 800 800 Orderable Part Number IRGS4045DPbF IRGS4045DTRLPbF IRGS4045DTRRPbF Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage IC@ TC = 25°C Continuous Collector Current IC@ TC = 100°C Continuous Collector Current ICM Pulsed Collector Current, VGE = 15V cILM Clamped Inductive Load Current, VGE = 20V IF@TC=25°C Diode Continuous Forward Current IF@TC=100°C IFM VGE Diode Continuous Forward Current dDiode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD @ TC =25° M.