VCES = 600V IC = 7.0A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.75V @ IC = 4.0A IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C C G E n-channel E G IRGR4607DPbF D-Pak E GC IRGS4607DPbF D2Pak E C G IRGB4607DPbF TO-220AB Applications • Industrial Motor Drive • UPS • So.
Low VCE(ON) and Switching Losses 5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient G Gate C Collector E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Base part number IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Package Type D-Pak D2Pak TO-220AB Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Tube 50 Tape and Reel Right 800 Tape and Reel Left.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRGS4610DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRGS4615DPBF |
International Rectifier |
Power MOSFET | |
3 | IRGS4620DPBF |
International Rectifier |
Power MOSFET | |
4 | IRGS4620DPbF |
Infineon |
IGBT | |
5 | IRGS4630DPBF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
6 | IRGS4630DPbF |
Infineon |
IGBT | |
7 | IRGS4640DPbF |
Infineon |
Insulated Gate Bipolar Transistor | |
8 | IRGS4045DPBF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
9 | IRGS4055PBF |
International Rectifier |
PDP Trench IGBT | |
10 | IRGS4056DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | IRGS4062DPBF |
International Rectifier |
Power MOSFET | |
12 | IRGS4064DPBF |
International Rectifier |
Power MOSFET |