IRGS4055PBF - International Rectifier

IRGS4055PBF PDP Trench IGBT

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to m.

Features

Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package l IRGB4055PbF IRGS4055PbF K ey Param eters 300 1.70 270 150 V V A °C V CE m in V CE (O N) typ. @ 110A I RP ma x @ T C = 25° C T J ma x c C C C G E E C G E C G D2Pak IRGS4055DPbF n-channel TO-220 IRGB4055DPbF G Gate C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device ut.