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IRGS4062DPBF |
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| Part Number | IRGS4062DPBF |
| Manufacturer | International Rectifier |
| Description | PD - 97355B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175... |
| Features |
• • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C IRGS4062DPbF IRGSL4062DPbF VCES = 600V IC = 24A, TC = 100°C G E tSC ≥ 5µs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.65V C Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and ... |
| Document |
 IRGS4062DPBF Data Sheet
PDF 484.73KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRGS4064DPBF |
International Rectifier |
Power MOSFET |
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| 2 | IRGS4065PBF |
International Rectifier |
IGBT |
|
| 3 | IRGS4045DPBF |
International Rectifier |
Insulated Gate Bipolar Transistor |
|
| 4 | IRGS4055PBF |
International Rectifier |
PDP Trench IGBT |
|
| 5 | IRGS4056DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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