IRGS4065PBF - International Rectifier

IRGS4065PBF IGBT

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to m.

Features

Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package l IRGB4065PbF IRGS4065PbF Key Parameters 300 1.75 205 150 V V A °C VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25°C c T J max C C C E C G D2Pak IRGS4065DPbF G E E C G n-channel TO-220 IRGB4065DPbF G Gate C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advan.