IRGS4615DPBF - International Rectifier

IRGS4615DPBF Power MOSFET

IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 15A, TC = 100°C tsc > 5µs, Tjmax = 175°C G E E G G C C C C E VCE(on) typ. = 1.55V @ 8A n-channel G D2-Pak IRGS4615DPbF TO-220AB IRGB4615DPbF C E Applications • Appliance Drives • Inverters • UPS Features Low VCE(ON) and switching losses S.

Features

Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant Gate Collector Em itter → Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Base part number IRGS4615DPbF IRGS4615DTRRPbF IRGS4615DTRLPbF IRGB46.