IRGB4630DPbF - International Rectifier

IRGB4630DPbF Insulated Gate Bipolar Transistor

IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C CC C C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A G E n-channel E GC E C G GCE GCE IRGS4630DPbF IRGB4630DPbF IRGP4630DPbF IRGP4630D-EPbF D2Pak TO-220AC TO-247AC TO-247AD Applications .

Features

G Gate C Collector Benefits E Emitter Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) temperature coefficient of parameters and tight distribution Excellent current sharing in parallel operation 5µs Short Circuit SOA Enables short circuit protection scheme Lead-Free, RoHS Compliant Environmentally friendly Base part number IRGS4630DPbF IRGB4630DPbF IRGP4630DPbF IRGP4630D-EP.