IRGB4620DPBF - International Rectifier

IRGB4620DPBF Power MOSFET

IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 20A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.55V @ IC = 12A Applications • Appliance Drive • Inverters • UPS G E C C C G G C G E E C G IRGB4620DPbF TO-220AC E C G IRGP4620DPbF TO-247AC E C G IRGP4620D-EPbF TO.

Features

Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) temperature coefficient and tight distribution Excellent current sharing in parallel operation of parameters 5µs Short Circuit SOA Enables short circuit protection scheme Lead-Free, RoHS Compliant Environmentally friendly Base part number Package Type Standard Pack Form Quantity Tube 50 Tape and Reel Right 800 Tape and Ree.