PD - 97189B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-.
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM)
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package
C
G E
n-channel
IRGB4061DPbF
VCES = 600V IC = 18A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65V
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
•.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRGB4060DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRGB4062DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRGB4064DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | IRGB4065PBF |
International Rectifier |
IGBT | |
5 | IRGB4045DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRGB4055PBF |
International Rectifier |
PDP TRENCH IGBT | |
7 | IRGB4056DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | IRGB4059DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | IRGB4086PbF |
International Rectifier |
PDP Trench IGBT | |
10 | IRGB420 |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | IRGB420U |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
12 | IRGB420UD2 |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |