www.DataSheet4U.com PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA Square RBSOA 100% of The Parts Tested for 4X Rated Current (ILM) Positive VCE (on) Temperature Coefficient. Ultr.
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• Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA Square RBSOA 100% of The Parts Tested for 4X Rated Current (ILM) Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free Package
G E C
VCES = 600V IC = 8.0A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
n-channel
C
VCE(on) typ. = 1.55V
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
• Rugged Transient.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRGB4061DPbF |
International Rectifier |
IGBT | |
2 | IRGB4062DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRGB4064DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | IRGB4065PBF |
International Rectifier |
IGBT | |
5 | IRGB4045DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRGB4055PBF |
International Rectifier |
PDP TRENCH IGBT | |
7 | IRGB4056DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | IRGB4059DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | IRGB4086PbF |
International Rectifier |
PDP Trench IGBT | |
10 | IRGB420 |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | IRGB420U |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
12 | IRGB420UD2 |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |