IRGB4610DPBF - International Rectifier

IRGB4610DPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 10A, TC = 100°C tsc > 5µs, Tjmax = 175°C G E E G D-Pak IRGR4610DPbF G D2-Pak IRGS4610DPbF C C C C E G C E VCE(on) typ. = 1.7V @ 6A n-channel G TO-220AB IRGB4610DPbF C E Applications • Appliance Drives • Inverters • UPS Feat.

Features

Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant G ate C ollector Em itter → Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Base part number Package Type IRGR4610DPbF D-PAK IRGS4610DPbF .