INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5µs SCSOA • Square RBSOA • 100% of The Parts Tested for 4X Rated Current (ILM) • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distrib.
• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5µs SCSOA
• Square RBSOA
• 100% of The Parts Tested for 4X Rated Current (ILM)
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
Abs.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRGB4055PBF |
International Rectifier |
PDP TRENCH IGBT | |
2 | IRGB4056DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRGB4045DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | IRGB4060DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | IRGB4061DPbF |
International Rectifier |
IGBT | |
6 | IRGB4062DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
7 | IRGB4064DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | IRGB4065PBF |
International Rectifier |
IGBT | |
9 | IRGB4086PbF |
International Rectifier |
PDP Trench IGBT | |
10 | IRGB420 |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | IRGB420U |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
12 | IRGB420UD2 |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |