IRGB4640DPbF - Infineon

IRGB4640DPbF Insulated Gate Bipolar Transistor

VCES = 600V IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C IC = 40A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C G VCE(ON) typ. = 1.60V @ IC = 24A Applications • Industrial Motor Drive • Inverters • UPS • Welding Features E n-channel G Gate E GC IRGS4640DPbF D2Pak GCE E C GCE.

Features

E n-channel G Gate E GC IRGS4640DPbF D2Pak GCE E C GCE G GCE IRGSL4640DPbF IRGB4640DPbF IRGP4640DPbF IRGP4640D-EPbF TO-262Pak TO-220AC TO-247AC TO-247AD C Collector E Emitter Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) temperature coefficient Excellent current sharing in parallel operation 5µs Short Circuit SOA Enables short circuit protection scheme Lead-.