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IRF830 - Inchange Semiconductor

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IRF830 N-Channel MOSFET Transistor

MOSFET IRF830 N-channel mosfet transistor INCHANGE ‹ Features With TO-220 package Simple drive requirements Fast switching V DSS=500V; RDS(ON)1.5 ;I 1.gate 2.drain 3.source D=4.5A ‹ Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER VDSS Drain-source voltage (VGS=0) VGS Gate-source voltage ID Drain Current-continuous@ TC=25 Ptot Total Dissipation@TC.

Features

With TO-220 package Simple drive requirements Fast switching V DSS=500V; RDS(ON)1.5 ;I 1.gate 2.drain 3.source D=4.5A ‹ Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER VDSS Drain-source voltage (VGS=0) VGS Gate-source voltage ID Drain Current-continuous@ TC=25 Ptot Total Dissipation@TC=25 Tj Max. Operating Junction temperature Tstg Storage temperature RATING 500 20 4.5 100 150 -65~150 UNIT V V A W ‹ Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD Drain-source breakdown voltage VGS=0; ID=0.25mA Gate threshold voltage VDS=.

The same part from a different manufacturer

Datasheet IRF830 - Vishay IRF830

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized .

Datasheet IRF830 - Advanced Power Electronics IRF830

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Datasheet IRF830 - TRSYS IRF830

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Datasheet IRF830 - International Rectifier IRF830

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Datasheet IRF830 - Comset Semiconductors IRF830

SEMICONDUCTORS IRF830 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. Th.

Datasheet IRF830 - ON Semiconductor IRF830

IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for h.

Datasheet IRF830 - NXP IRF830

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T..

Datasheet IRF830 - STMicroelectronics IRF830

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology.

Datasheet IRF830 - Intersil Corporation IRF830

IRF830 Data Sheet July 1999 File Number 1582.3 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement.

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