MOSFET IRF830 N-channel mosfet transistor INCHANGE Features With TO-220 package Simple drive requirements Fast switching V DSS=500V; RDS(ON)1.5 ;I 1.gate 2.drain 3.source D=4.5A Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER VDSS Drain-source voltage (VGS=0) VGS Gate-source voltage ID Drain Current-continuous@ TC=25 Ptot Total Dissipation@TC.
With TO-220 package Simple drive requirements Fast switching V DSS=500V; RDS(ON)1.5 ;I 1.gate 2.drain 3.source D=4.5A Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER VDSS Drain-source voltage (VGS=0) VGS Gate-source voltage ID Drain Current-continuous@ TC=25 Ptot Total Dissipation@TC=25 Tj Max. Operating Junction temperature Tstg Storage temperature RATING 500 20 4.5 100 150 -65~150 UNIT V V A W Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD Drain-source breakdown voltage VGS=0; ID=0.25mA Gate threshold voltage VDS=.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized .
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable .
SEMICONDUCTORS IRF830 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. Th.
IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for h.
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T..
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology.
IRF830 Data Sheet July 1999 File Number 1582.3 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF830 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
2 | IRF830 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
3 | IRF830 |
nELL |
N-Channel Power MOSFET | |
4 | IRF8301MPbF |
International Rectifier |
Power MOSFET | |
5 | IRF8301MTRPBF |
International Rectifier |
Power MOSFET | |
6 | IRF8302MPBF |
International Rectifier |
Power MOSFET | |
7 | IRF8304MPBF |
International Rectifier |
Power MOSFET | |
8 | IRF8306MPBF |
International Rectifier |
Power MOSFET | |
9 | IRF8308MPBF |
International Rectifier |
POWER MOSFET | |
10 | IRF8308MTRPbF |
International Rectifier |
POWER MOSFET | |
11 | IRF830A |
Vishay |
Power MOSFET | |
12 | IRF830A |
nELL |
N-Channel Power MOSFET |