The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest onstate resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor pha.
e is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal fo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF8308MTRPbF |
International Rectifier |
POWER MOSFET | |
2 | IRF830 |
NXP |
PowerMOS transistor | |
3 | IRF830 |
STMicroelectronics |
N-Channel Power MOSFET | |
4 | IRF830 |
TRSYS |
N-CHANNEL ENHANCEMENT MODE MOSFET | |
5 | IRF830 |
Intersil Corporation |
N-Channel Power MOSFET | |
6 | IRF830 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
7 | IRF830 |
International Rectifier |
Power MOSFET | |
8 | IRF830 |
Comset Semiconductors |
N-Channel Enhancement Mode Power MOS Transistors | |
9 | IRF830 |
Vishay |
Power MOSFET | |
10 | IRF830 |
ON Semiconductor |
Power Field Effect Transistor | |
11 | IRF830 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
12 | IRF830 |
nELL |
N-Channel Power MOSFET |