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Features
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7 62
Unit
°C/W
1/3 09/11/2012 COMSET SEMICONDUCTORS
datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
IRF830
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VDSS VGS(th) IDSS
Ratings
Drain-Source Breakdown Voltage Gate-threshold Voltage Zero Gate Voltage Drain Current Gate-Source leakage Current Drain-Source on Resistance
Test Condition(s)
Min
500 2 -
Typ
3 -
Max
4 25
Unit
V V µA
ID= 250 µA, VGS= 0 V ID= 250 µA, VGS= VDS VDS= 500 V, VGS= 0 V Tj= 25 °C VDS= 500 V, VGS= 0 V Tj= 125 °C VGS= 20 V, VDS= 0 V ID= 2.7 A, VGS= 10 V
250 100 1.5 nA Ω
IGSS RDS(on)
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IRF830 Data Sheet
