The IRF8302MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor p.
8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8302MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conductio.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF830 |
NXP |
PowerMOS transistor | |
2 | IRF830 |
STMicroelectronics |
N-Channel Power MOSFET | |
3 | IRF830 |
TRSYS |
N-CHANNEL ENHANCEMENT MODE MOSFET | |
4 | IRF830 |
Intersil Corporation |
N-Channel Power MOSFET | |
5 | IRF830 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
6 | IRF830 |
International Rectifier |
Power MOSFET | |
7 | IRF830 |
Comset Semiconductors |
N-Channel Enhancement Mode Power MOS Transistors | |
8 | IRF830 |
Vishay |
Power MOSFET | |
9 | IRF830 |
ON Semiconductor |
Power Field Effect Transistor | |
10 | IRF830 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
11 | IRF830 |
nELL |
N-Channel Power MOSFET | |
12 | IRF830 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |