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IRF830A - INCHANGE

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IRF830A N-Channel MOSFET

isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF830A FEATURES ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switch Mode Power Supply ·Uninterruptable Power Supply ·High speed powe.

Features


·Drain Current
  –ID=5A@ TC=25℃
·Drain Source Voltage- : VDSS= 500V(Min)
·Fast Switching Speed
·Low Drive Requirement
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
·Switch Mode Power Supply
·Uninterruptable Power Supply
·High speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V Drain Current-Continuous@ TC=25℃ 5 ID A Drain Current-continuous@ TC=100℃ 3.2 IDM Drain Current-Single Plused 20 A PD Total Dissipation @TC=25℃ .

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Datasheet IRF830A - Vishay IRF830A

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The Nell IRF830 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested a.

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