The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipmen.
ques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8301MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses and very high current carrying capability make this product ideal for power tools. Ordering Information Base Part Number IRF8301MPbF Package Type DirectFET MT Standard Pack Form.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF8301MPbF |
International Rectifier |
Power MOSFET | |
2 | IRF830 |
NXP |
PowerMOS transistor | |
3 | IRF830 |
STMicroelectronics |
N-Channel Power MOSFET | |
4 | IRF830 |
TRSYS |
N-CHANNEL ENHANCEMENT MODE MOSFET | |
5 | IRF830 |
Intersil Corporation |
N-Channel Power MOSFET | |
6 | IRF830 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
7 | IRF830 |
International Rectifier |
Power MOSFET | |
8 | IRF830 |
Comset Semiconductors |
N-Channel Enhancement Mode Power MOS Transistors | |
9 | IRF830 |
Vishay |
Power MOSFET | |
10 | IRF830 |
ON Semiconductor |
Power Field Effect Transistor | |
11 | IRF830 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
12 | IRF830 |
nELL |
N-Channel Power MOSFET |