IRF7807V - International Rectifier

IRF7807V N-Channel Power MOSFET

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair of IRF7807V devices provides the best cost/ performance so.

Features

stance Parameter Maximum Junction-to-Ambientƒ Maximum Junction-to-Lead RθJA RθJL Max. 50 20 Units °C/W °C/W TJ, TSTG IS ISM TA = 25°C TA = 70°C IDM PD Symbol VDS VGS ID IRF7807 V 30 ±20 8.3 6.6 66 2.5 1.6
  –55 to 150 2.5 66 °C A W A Units V 3/1/01 IRF7807V Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS(on) VGS(th) IDSS 1.0 20 100 IGSS QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf (off) Min 30 Typ
  – 17 Max
  – 25 Units V mΩ V Conditions VGS = 0V, ID = 250µA VGS = 4.5V, ID .