IRF7807D1PBF - International Rectifier

IRF7807D1PBF HEXFET Power MOSFET

The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s .

Features

(Max Values) IRF7807D1 VDS RDS(on) Qg Qsw Qoss 30V 25mΩ 14nC 5.2nC 18.4nC Junction & Storage Temperature Range RθJA www.irf.com 1 5/5/04 IRF7807D1PbF Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage
* Static Drain-Source on Resistance
* Drain-Source Leakage Current
* Gate-Source Leakage Current
* Total Gate Charge Synch FET
* Total Gate Charge Control FET
* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge
* (Qgs2 + Qgd) Output Charge
* Gate Resistance V(BR)DSS RDS(on) 1.0 90 7.2 +/- 100 10.5 12 2.1 0.76 2.9 3.66 15.3 1.2 5.2 18.4 Ω .