The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s.
(Max Values)
IRF7807D2
VDS RDS(on) Qg QSW Qoss
30V 25mΩ 14nC 5.2nC 21.6nC
Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient
RθJA
Max. 50
Units °C/W
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11/8/99
IRF7807D2
Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage
* Static Drain-Source on Resistance
* Drain-Source Leakage Current
* V(BR)DSS RDS(on) 1.0 90 7.2 Min 30 17 25 Typ Max Units V mΩ V µA mA Conditions VGS = 0V, ID = 250µA VGS = 4.5V, ID = 7A VDS = VGS,ID = 250µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, Tj = 125°C VGS = +/-12V VDS<100mV, VGS = 5V, I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF7807D1 |
International Rectifier |
MOSFET | |
2 | IRF7807D1PBF |
International Rectifier |
HEXFET Power MOSFET | |
3 | IRF7807D2PbF |
International Rectifier |
MOSFET / SCHOTTKY DIODE | |
4 | IRF7807 |
International Rectifier |
N-Channel Power MOSFET | |
5 | IRF7807A |
International Rectifier |
N-Channel Power MOSFET | |
6 | IRF7807APbF |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
7 | IRF7807APbF-1 |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
8 | IRF7807ATRPbF-1 |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
9 | IRF7807PbF |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
10 | IRF7807PbF-1 |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
11 | IRF7807TRPbF-1 |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
12 | IRF7807V |
International Rectifier |
N-Channel Power MOSFET |