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IRF7807V |
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| Part Number | IRF7807V |
| Manufacturer | International Rectifier |
| Description | This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal fo... |
| Features |
stance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead RθJA RθJL Max. 50 20 Units °C/W °C/W TJ, TSTG IS ISM TA = 25°C TA = 70°C IDM PD Symbol VDS VGS ID IRF7807 V 30 ±20 8.3 6.6 66 2.5 1.6 –55 to 150 2.5 66 °C A W A Units V 3/1/01 IRF7807V Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS(on) VGS(th) IDSS 1.0 20 100 IGSS QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf (off) Min 30 Typ – 17 Max – 25 Units V mΩ V Conditions VGS = 0V, ID = 250µA VGS = 4.5V, ID ... |
| Document |
 IRF7807V Data Sheet
PDF 159.95KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF7807 |
International Rectifier |
N-Channel Power MOSFET |
|
| 2 | IRF7807A |
International Rectifier |
N-Channel Power MOSFET |
|
| 3 | IRF7807APbF |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters |
|
| 4 | IRF7807APbF-1 |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters |
|
| 5 | IRF7807ATRPbF-1 |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters |
|