These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair of IRF7807 devices provides the best cost/ performance soluti.
IRF7807 IRF7807A
Vds 30V 30V
Rds(on) 25mΩ 25mΩ
Qg 17nC 17nC
Qsw
5.2nC
Qoss 16.8nC 16.8nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (VGS ≥ 4.5V) Pulsed Drain Current
70°C
Power Dissipation
25°C
70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed source Current
Symbol VDS VGS I
D
IDM PD
TJ, TSTG I
S
ISM
IRF7807
IRF7807A
30
±12
8.3 8.3
6.6 6.6
66 66
2.5
1.6
–55 to 150
2.5 2.5
66 66
Units V A
W °C A
Thermal Resistance Parameter Maximum Junction-to-Ambi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF7807PbF-1 |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
2 | IRF7807 |
International Rectifier |
N-Channel Power MOSFET | |
3 | IRF7807A |
International Rectifier |
N-Channel Power MOSFET | |
4 | IRF7807APbF |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
5 | IRF7807APbF-1 |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
6 | IRF7807ATRPbF-1 |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
7 | IRF7807D1 |
International Rectifier |
MOSFET | |
8 | IRF7807D1PBF |
International Rectifier |
HEXFET Power MOSFET | |
9 | IRF7807D2 |
International Rectifier |
MOSFET | |
10 | IRF7807D2PbF |
International Rectifier |
MOSFET / SCHOTTKY DIODE | |
11 | IRF7807TRPbF-1 |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
12 | IRF7807V |
International Rectifier |
N-Channel Power MOSFET |